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Harufusa Kondo 高级技术顾问
Mitsubishi Electric Corporation
报告题目：Advancement of Power chip and module technology
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Abstract Mitsubishi Electric Corp. has a long history and extensive experience in the development of power devices. This presentation will delve into the latest advancements in our power chips, including Si-IGBT and SiC MOSFET. We will specifically touch on the 8th generation IGBT. Additionally, we will discuss power modules designed for rapidly growing applications in sectors such as renewable energy, railways and power, consumer goods, and automotive. Biography Dr. Kondo received the B.S., M.S., and Ph.D. degrees from Osaka University, JAPAN. In 1985, he joined Mitsubishi Electric Corporation. In her LSI R&D Laboratory, he had been engaged in the design of large-scale chips for digital communication. In 2003, he moved to the Optical and High-frequency Device Works, where he had been worked on high-speed Optical Transceiver development. Since 2009, he has been working at Power Device Works for the development of DIPIPM™, Industrial modules, and high-voltage modules including silicon IGBT and SiC MOSFET. He is currently the Senior Technical Advisor at Power Device Works, Mitsubishi Electric Corporation. |
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论文初稿提交截止时间
(
2024年6月30日 2024年7月22日
)
工业报告征集截止时间
(
2024年7月15日 2024年7月30日
)
专题讲座征集截止时间
(
2024年7月15日 2024年7月30日
)
论文录用通知时间
( 2024年8月15日 )
论文终稿提交时间
( 2024年9月15日 )
报名系统开放时间
( 2024年8月16日 )
大会时间
( 2024年11月8-11日 )
